Single Crystal Epitaxy and Characterization of beta Silicon Carbide.
Abstract
Single crystal thin films of beta-SiC of up to five microns in thickness have been epitaxially grown on (111) Si by very carefully controlled chemical vapor deposition techniques wherein the pressure and flow rates of the reactive gases are independent of one another. Theoretical CVD phase equilibrium diagrams for the Si-C system have been calculated for various reactive and carrier gases, temperatures and pressures. A special sputtering unit has also been remodeled in order to produce amorphous SiC which can be annealed to form beta-SiC or which may be used for substraes for subsequent CVD growth of this material.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1981
- Accession Number
- ADA098234
Entities
People
- Robert F Davis
Organizations
- North Carolina State University