Integrated Optical Transmitter and Receiver
Abstract
Chip layout of electronic driver circuits utilizing TELD's, FET's, and resistors were completed. Six driver configurations were designed into a unit cell to anticipate diode laser threshold prebias currents of 40 to 150 mA and modulation currents approximately 0.2 I subscript to 3I subscript t depending on the driver and laser threshold combination. The electronic driver was designed to be compatible with a TJS, diffused-stripe, or other laser structure grown in an etched groove in the S. I. GaAs substrate for planar electronic driver processing. Generalized processing steps for the fabrication of planar integrated transmitter structures were formulated. The feasibility of key planar processing steps were demonstrated. Growth of MO-CVD into an etched groove in S. I. GaAs with subsequent etch processing to yield a planar surface was demonstrated. This groove growth verifies the capability of achieving planar GaAlAs/GaAs/GaAlAs laser structures in S. I. GaAs. Selective implantation rather than epitaxial techniques used to fabricate electronic devices offer the advantages of (1) higher performance (eliminating the deleterious effects of grown interface), (2) greater control and reproducibility, and (3) compatibility with planar processing techniques. Sulfur implanted/diffused Gunn devices with higher current drop ratios at lower nt products than epitaxial counterparts were reported.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1981
- Accession Number
- ADA098273
Entities
People
- P. D. Dapkus