Electronic Processes in InP and Related Compounds.

Abstract

The growth and characterization of high-purity epitaxial layers grown by liquid-phase-epitaxy (LPE) are described. Chemical and electrical evaluation of the layers indicate that silicon and sulfur are the dominant residual donors in LPE-grown InP layers. Techniques for controlling these dopants are discussed. The current-voltage characteristics of Schottky diodes on p-InP are analyzed. Aluminum, silver, and gold were tried as Schottky-barrier metals. The results reported here demonstrate that Al is the best choice as the Schottky metal. An automated system to measure the relative photoresponse from Schottky diodes has been assembled. Majority carrier (hole) initiated avalanche multiplication has been observed on these Schottky diodes. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1981
Accession Number
ADA098349

Entities

People

  • C. L. Anderson
  • Dawn E. Holmes
  • G. S. Kamath
  • H. L. Dunlap
  • K. V. Vaidyanathan

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Avalanche Photodiodes
  • Base Lines
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Detection
  • Electronics Laboratories
  • Epitaxial Growth
  • Mass Spectrometry
  • Metal-Semiconductor Junctions
  • Schottky Barrier Devices
  • Schottky Diodes
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics