GaAs FET Logic at Low Temperatures.

Abstract

Efforts during the first year of this contract have concentrated on process development, material development and characterization and circuit development. Preliminary results on single stage inverters show about a two-fold speed advantage at 77 K compared to that at 300 K for material doped in the mid-ten to the 16th per cu cm range. This advantage is offset by an aprox. 90% increase in power dissipation at 77 K compared to that at 300 K, so the speed-power product is approximately the same at the two temperatures. A more accurate assessment of circuit speed and power dissipation is expected by the use of ring oscillators. Accordingly, work has been concentrated in this area during the latter part of this period. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1980
Accession Number
ADA098390

Entities

People

  • F. H. Doerbeck
  • M. R. Namordi

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Capacitors
  • Circuits
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Low Temperature
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Oscillators
  • Plastic Explosives
  • Reproducibility
  • Resistance
  • Sine Waves
  • Standards
  • Test Equipment

Readers

  • Integrated Circuit Design and Technology.
  • Mathematics or Statistics