Scanning Photovoltage Investigation of Silicon- and Gallium Arsenide-Based Metal Oxide Semiconductor (MOS) Capacitors.
Abstract
The scanning photovoltage technique was used to image the semiconductor-oxide interface region of MOS capacitors based on silicon and on GaAs. The technique gives a 'photovoltage image' of optically active defects at the interface. Various types of defects and gross imperfections were observed. In the case of the GaAs MOS capacitors, a high density of gross imperfections resulting from surface damage was observed on lightly etched samples. Heavier etching was noted to eliminate this damage and the lower defect density can be correlated with improved device performance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1981
- Accession Number
- ADA098394
Entities
People
- J. J. Winter
- R. L. Streever
Organizations
- United States Army Communications-Electronics Command