Further Remarks on Metastability in Amorphous Semiconductors.

Abstract

The bandwidths for metastable states in a simple model of amorphous semiconductors is evaluated exactly. The region of metastability in the space of the model parameters (phase diagram) is deduced and the subregion corresponding to an infinite range model is indicated. The model predicts both paramagnetic and diamagnetic metastable states and the relationship between them is discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1981
Accession Number
ADA098461

Entities

People

  • D. C. Licciardello

Organizations

  • Princeton University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amorphous Materials
  • Bandwidth
  • Charge Transfer
  • Crystal Structure
  • Electron Emission
  • Electron Energy
  • Electrons
  • Energy
  • Equations
  • Ground State
  • Low Temperature
  • Materials
  • Metastable State
  • New Jersey
  • Phonons
  • Quantum Numbers
  • Semiconductors

Readers

  • Computational Modeling and Simulation
  • Graph Algorithms and Convex Optimization.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Space