Advanced TELD/FET Technology.

Abstract

Planar TELDs have been designed, fabricated, and tested. Computer models have been developed for designing and predicting the characteristics of TELDs as a function of device geometry, material parameters, and bias conditions. TELDs have been fabricated on ion-implanted LPE and VPE GaAs. Frequency dividers that divide the input signal by any integer from two through nine have been realized. A process technology for fabricating TELD/FET circuits was developed and test circuits fabricated incorporating this technology. Because of the relatively low doping density requirements for TELDs, material reproducibility was not sufficient to obtain repeatable results and the current loop was not satisfactory for successful operation of the circuits. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1981
Accession Number
ADA098630

Entities

People

  • Paul T. Greiling

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Cathode Followers
  • Circuits
  • Electric Fields
  • Electron Beam Lithography
  • Equations
  • Equivalent Circuits
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Frequency Dividers
  • Geometry
  • Ion Implantation
  • Ion Sources
  • Materials
  • Metal-Semiconductor Junctions
  • Schottky Diodes
  • Semiconductors

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Semiconductor Device Technology