The Effects of Oxygen Pressure on Total Dose Susceptibility.
Abstract
It has been hypothesized that the fixed charge induced by ionizing radiation in the oxide of metal-oxide-silicon (MOS) structures is the result of traps produced by excess silicon. If this is so, then the amount of charging should vary with the oxygen pressure at which the oxide was grown. In this experiment, samples grown at partial pressures of 0.03, 0.04, 0.25, and 1 x 10 to the fifth power Pa (atm) and samples grown at 16, 33, 65, 129, 263 and 513 x 10 to the fifth power Pa (atm) were exposed to 1 Mrad(Si) Co to the sixtieth power. The radiation-induced shifts in voltage, at which the surface potential is at flat band and midgap, were recorded for an annealing period of 63 days or longer. The results from the partial pressure oxides data supported the hypothesis.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1981
- Accession Number
- ADA098654
Entities
People
- Roe J. Maier Jr
Organizations
- Air Force Research Laboratory