III-V Heterostructure Avalanche Photodiode Modules for Fiber Optic Communication Links in the 1.0 to 1.3 Micrometer Spectral Range.

Abstract

Hybrid-structure InP-InGaAsP APDs have been fabricated which have negligible dark current (I sub D < 6 nA at M = 30). The excess noise factor F, for a hole-initiated avalanche, has been determined to be F/M = 0.42 + or - 0.10 for 5 < or = M < or = 35. Conventional structure high-bandgap (1.27 eV) InGaAsP APDs have been fabricated. These resemble low-leakage InP APDs rather than the high-leakage low-bandgap (1.00 eV) InGaAsP APDs. Low-noise bipolar transimpedance preamps have been designed and fabricated. These have bandwidths out to 500 MHz (for R sub f = 1 K omega). The sensitivity of the best hybrid APDs used with these preamps is estimated to be -46.6 dBm for a 100 Mbit/sec, 10 to the minus 9th power bit error rate system, operating at a wavelength of 1.1 microns. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1981
Accession Number
ADA099506

Entities

People

  • K. Von Dessonneck
  • R. Yeats

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Bandwidth
  • Detection
  • Detectors
  • Diodes
  • Electronics
  • Electronics Laboratories
  • Field Effect Transistors
  • Frequency Response
  • Low Noise
  • Measurement
  • Military Research
  • Optical Fibers
  • Photodiodes
  • Quantum Efficiency
  • Transistor Amplifiers
  • Transistors

Readers

  • Analytical Mechanics
  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy