Fabrication and Properties of Multilayer Structures
Abstract
The program has as its goal the development of vapor deposition processes for application to integrated circuit technology. Its purpose is to investigate vapor deposition techniques that offer potential for synthesis of materials having new, unique structures and/or of higher quality than currently attainable. Technological application of these materials will be a significant consideration in the selection of specific systems for study, particularly multilayer integrated circuit applications. In this period, experiments with the new cryopumped system were performed. Reactive sputtering research focused on a detailed study of SiOx and a more broad guage study of MOx films for a number of metals M (M = Si, W, Al, Zn, Zr, Mg) on 3-in. diameter wafers. High deposition rates, a wide range of stoichiometry and either amorphous or crystalline films were formed. The cleanliness of the new system is orders of magnitude better than the old system. Multiple source deposition studies focused on SiCx formation. X-ray analysis, refractive index and bandgap data all confirm the formation of SiC films. Good control of the sputter deposition of these films has been demonstrated. In the theoretical area, the constraints placed on closed n-ring assemblies (SinO3n) in SiO2 are being assessed to identify those constraints which differentiate the structure between the crystalline and vitreous forms.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1981
- Accession Number
- ADA099793
Entities
People
- K. Seaward
- L. Nagel
- T. W. Barbee Jr.
- W. A. Tiller
- W. Dibble
Organizations
- Stanford University