Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Abstract

The organization of this report corresponds to that of the contract proposal with sections devoted to Thermal Oxidation, Ion Implantation, Chemical Vapor Deposition of Silicon, Materials Analysis and Interface Physics, and Process Model Implementation in SUPREM. In each section, there will be a brief description of progress made, including difficulties encountered, results obtained with their supporting data, and plans for the future.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA099925

Entities

People

  • James D. Plummer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Charge Density
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Electromagnetic Radiation
  • Electrons
  • Fiber Optics
  • Grain Growth
  • Grain Size
  • High Pressure
  • Ion Implantation
  • Materials
  • Measurement
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Technical Research and Report Writing.
  • Thermal Physics or Thermal Science.