Annealing of Boron-Implanted Silicon by a Heat-Assisted Noncoherent Light Flash.

Abstract

High quality annealing of boron implanted silicon 10 to the 15th power/sq cm, 50 keV) was achieved using commercially available quartz xenon flash tubes after a 20 second preheat. Electrically active dopant profiles, obtained from spreading resistance profiles, indicate that the annealing proceeded by solid phase epitaxy. We also find that the degree of boron redistribution can be controlled by the cumulative exposure to the flash. Characteristics of the apparatus used suggest that annealing 3 inch diameter wafers with a throughput of 3 wafers per minute is feasible. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1981
Accession Number
ADA100645

Entities

People

  • H. A. Bomke
  • H. L. Berkowitz
  • M. Harmatz
  • R. Lux
  • S. Kronenberg

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Annealing
  • Calorimeters
  • Diameters
  • Electron Beams
  • Electronics
  • Flash Lamps
  • Lamps
  • Materials
  • Measurement
  • New Jersey
  • Phase
  • Resistance
  • Semiconductors
  • Solid Phases
  • Solid State Electronics
  • Standards

Fields of Study

  • Materials science

Readers

  • Combustion and Flow Dynamics.
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.