System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide.
Abstract
The glow discharge optical spectroscopy (GDOS) technique was investigated to determine if the sensitivity of the system could be improved. GDOS was applied to determine impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Modifications were made to the sputtering chamber and the light collection systems which resulted in a 3.7 times increase in system sensitivity. Comparisons were made to previous studies by sputtering GaAs samples implanted with Ge at energies of 90 keV and 120 keV and fluences of 5 x 10 to the 14th power/sq cm and 10 to the 15th power/sq cm. The implanted samples were sputtered in a low pressure argon gas discharge. Intensity of a strong emission line, characteristic of the implanted impurity, was monitored as a function of time. Profiles of Ge implanted GaAs were measured and analyzed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1980
- Accession Number
- ADA100778
Entities
People
- Paul J. Apuzzo
Organizations
- Air Force Institute of Technology