Properties and Applications of GaInAsP.

Abstract

This research program involved the investigation of several aspects of GaxInl-xAsy-Pl-y, grown by LPE, that are of importance to the potential use of this material for field effect transistors, transferred-electron oscillators, and other devices. Results obtained include: various electrical characteristics of the material; the observation that the GaInAsP-InP conduction band discontinuity was less than 60 meV for these junctions; the characteristics of some quaternary transferred electron oscillators; and the properties of anodic oxides grown on the quaternary.

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Document Details

Document Type
Technical Report
Publication Date
Mar 20, 1981
Accession Number
ADA100911

Entities

People

  • Russell E. Hayes

Organizations

  • University of Colorado Boulder

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Electrical Engineering
  • Electrical Properties
  • Electronics
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • Liquid Phase Epitaxy
  • Materials
  • Metal Oxide Semiconductors
  • Scattering
  • Semiconductors
  • Solid State Electronics
  • Thickness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene