Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide-Semiconductor (MOS) Devices
Abstract
This report covers a discussion of high current injection into wide bandgap insulators, the use of Si-rich SiO2 in DEIS EAROM FET's, modeling calculations for predicting the operation of DEIS EAROM's, the relationship of electron traps in SiO2 to OH groups and H2O, the physics of very thin (50-200 A) gate insulators, the relationship of interface state generation to electron capture on trapped holes near the Si-SiO2 interface, radiation damage of SiO2 layers exposed to plasmas, the effect of annealing on the Al-SiO2 interfacial energy barrier, and a techique for measuring the diffusion of an oxidant in SiO2 films.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1981
- Accession Number
- ADA100962
Entities
People
- A. Hartstein
- D. J. Dimaria
- D. W. Dong
- K. M. Demeyer
- L. M. Ephrath
Organizations
- IBM Thomas J. Watson Research Center