Development of Long Wavelength Single Longitudinal (SLM) Injection Laser Diodes.
Abstract
Development of Long Wavelength Single Longitudinal (SLM) Injection Laser Diodes emitting in the 1.3 micron region, utilizing a buried heterojunction BH structure. This final report describes efforts directed toward the development and optimization of these type devices and, in particular, concentrates on the following points: (1) Optimization of the double heterojunction DH structure; (2) Process development connected with the fabrication of buried heterojunction BH laser structures; (3) Modification BH laser structure and fabrication technique to optimize severe melt back; (4) Modification of the regrowth LPE technique to resolve melt back and the optimization of the N-P reverse bias junctions; and (5) Device performance. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1980
- Accession Number
- ADA101068
Entities
People
- Frank D. Speer
- Thomas E. Stockton