Investigation of Surface-Scattering Losses of III-V Compound Semiconductors.

Abstract

Stages 1 and 2 of the proposed program were completed during the first 18 months of this effort. A satellite chamber for device fabrication was designed, built and incorporated into the main high vacuum chamber. The free surface properties of GaAs (110) and GaP (110) were studied using LEED and AES. Reports on this work were presented at scientific meetings. The problem of a wave propagating with losses in a rectangular waveguide was formulated and solved. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 10, 1981
Accession Number
ADA101167

Entities

People

  • Bansang W. Lee

Organizations

  • Rutgers School of Engineering

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Computer Graphics
  • Computer Programs
  • Computers
  • Crystal Structure
  • Electronics
  • Frequency
  • Information Theory
  • Mathematical Analysis
  • Power Spectra
  • Refraction
  • Scattering
  • Semiconductors
  • Signal Processing
  • Spectra
  • Surface Properties
  • Two Dimensional

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster