Bipolar Transistor and Diode Failure to Electrical Transients--Predictive Failure Modeling versus Experimental Damage Testing. 2. AFWL Transistor and Diode Failure Model.

Abstract

An investigation of the predictive capability of a new Air Force Weapons Laboratory model for transistor and diode failure under reverse bias was initiated. A comparison with the junction capacitance damage model shows a doubled improvement at high confidence levels based on an Army-generated population of experimental damage data. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1981
Accession Number
ADA101581

Entities

People

  • Michael J. Vrabel

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Bipolar Junction Transistors
  • Computer Science
  • Diodes
  • Electronic Components
  • Electronics
  • Engineering
  • Experimental Data
  • National Security
  • Navy
  • Security
  • Semiconductors
  • Test And Evaluation
  • Thermal Resistance
  • Transistors
  • Weapons

Fields of Study

  • Engineering

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology