Monolithic GaAs Dual-Gate FET Phase Shifter.

Abstract

Progress is reported. (1) The photomask of a 0 to 90 deg monolithic GaAs dual-gate FET phase shifter was designed and ordered from Photronics Labs, Inc. in Connecticut. The estimated delivery date is late June 1981. (2) A technique for fabricating 'via' holes using laser drilling was developed. This technique can drill a 1-mil-diameter via hole through a 4-mil-thick GaAs substrate without much undercut and without an infrared microscope for backside alignment. (3) A four-way, in-phase combiner on Al2O3 substrate has been developed with good performance. The same design is being modified for fabrication on GaAs semi-insulating substrates. This four-way, in-phase combiner is needed for the 0 to 360 deg phase shifter that will be developed in the next phase. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 01, 1981
Accession Number
ADA101667

Entities

People

  • M Kumar
  • R. Menna
  • S. N. Subbarao

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Amplifiers
  • Circuits
  • Diameters
  • Drills
  • Fabrication
  • Field Effect Transistors
  • Film Resistors
  • Frequency
  • Insertion Loss
  • Integrated Circuits
  • Laser Drilling
  • Lasers
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Dividers
  • Semiconductors

Readers

  • Integrated Circuit Design and Technology.
  • Phased Array Antenna Design.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene