Electron Device Contact Studies.

Abstract

This report describes the initial half of a program of investigation and characterization of contacts made to GaAs. A theoretical model of contact behavior based on electron tunneling is adapted to GaAs and will be used to compare experimental results of Au contacts fabricated on Sn diffused, n-type, GaAs surface layers. The fabrication of n-type layers using spin-on dopant sources and a semiclosed chamber, in an open tube diffusion process are explained. the characterization of contact performance with a value of specific contact resistance, R sub C, and the measurement of R sub C using the transfer length method are covered. Investigation into In-au GaAs alloyed type contacts is also presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1980
Accession Number
ADA102088

Entities

People

  • Marlin O. Thurston
  • Philip E. Wigen

Organizations

  • Ohio State University

Tags

DTIC Thesaurus Topics

  • Air Force
  • Chemical Reactions
  • Computers
  • Conduction Bands
  • Electronics Laboratories
  • Electrons
  • Emission
  • Energy Bands
  • Equations
  • Fermi Levels
  • Field Emission
  • Free Electrons
  • Measurement
  • N Type Semiconductors
  • P-N Junctions
  • Semiconductors
  • Work Functions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics