Radiation-Hardened N(+) Gate CMOS/SOS.

Abstract

Process development work for a hardened N+ polysilicon-gate CMOS/SOS process has demonstrated that it is possible to make functional 4K CMOS/SOS static RAMs that are hard to 5 x 10 to the 5th power rads without the implementation of special hardened circuit design techniques. Present circuit probe yields are low, limited by the lack of a hardened low-temperature contoured field oxide. Independent research has shown that a hardened reflow process is possible for such field oxides. Development of this reflow process is nearly complete and should result in significant improvement in yields when fully integrated into the rad-hard N+ process. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1981
Accession Number
ADA102123

Entities

People

  • G. J. Brucker
  • G. W. Hughes
  • R. K. Smeltzer

Organizations

  • Sarnoff Corporation

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  • Advanced Electronics

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Fields of Study

  • Physics

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  • Integrated Circuit Design and Technology.