Epitaxial Growth of GeGaAs.
Abstract
This final report summarizes the results of a 4-year research effort; the first two years of which were on liquid phase epitaxial and MBE approaches and the last two years were on the plasma-enhanced CVD technique. The primary conclusions of this work are that: for the LPE technique, in spite of careful control of the kinetic factors, the thermodynamic instabilities at the melt-seed interface are dominant at the initiation of growth. This results in dissolution of a few monolayers of GaAs and subsequent autodoping in the Ge single crystal. However, the purity of the Ge layers was greatly improved by using the Plasma-Enhanced CVD technique. P-type layers with p approx 10 to the 16th power cu cm and p approx. 1500 sq cm/V-s have been achieved. Mirror smooth layers with sharp interfaces are routinely obtained. Doping with volatile hydride is compatible with the PECVD technique. P-type layers doped with B2H6 to up to p approx 4 x 10 to the 19th power cu cm has been obtained. In situ growth of multi-layer structures has also been demonstrated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1981
- Accession Number
- ADA102889
Entities
People
- Anthony A. Immorlica Jr
- Burt W. Ludington
- Kwan T Ip
- Robert D. Fairman