Semiconductor Technology Program. Progress Briefs
Abstract
This report provides information on the current status of NBS work on measurement technology for semiconductor materials, process control, and devices. Emphasis is placed on silicon and silicon-based devices. Highlighted activities include newly issued resistivity SRMs, characteristics of sulfur- related deep levels in silicon, photoluminescence of indium-doped silicon, effect of tertiary interferograms on Fourier transform spectroscopy, design information for a set of wafer optical line-width standards, modeling of short- channel MOS transistors, acoustic-emission testing of tape-bonded ICs, laser scanning of a solar cell test pattern, power loss of transistor leads during fast switching, and second breakdown and radiation effects in power MOS transistors. Brief descriptions of an upcoming linewidth measurement seminar and a survey of Federal IC processing facilities are given. In addition, recent publications and publications in press are listed. The report is not meant to be exhaustive; contacts for obtaining further information are listed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1981
- Accession Number
- ADA102895
Entities
People
- W. M. Bullis
Organizations
- National Institute of Standards and Technology