Electrooptical Devices.

Abstract

Contents: Gain Spectra in GaInAsP/InP Proton-Bombarded Stripe-Geometry DH Lasers; The Recycling of Spontaneous Photons in GaInAsP/InP Double-Heterostructure Lasers; Low Dark-Current, High Gain GaInAsP/InP Avalanche Photodetectors; Thickness of LPE Ga(x)In(1-x)As(y)P(1-y) Layers Nearly Lattice-Matched to (100)-InP Substrates; and LPE Surface Morphology of InP(Zn).

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1980
Accession Number
ADA103542

Entities

People

  • Charles E. Hurwitz

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Current Density
  • Detectors
  • Efficiency
  • Electronics Laboratories
  • Energy Bands
  • Frequency
  • Geometry
  • Materials
  • Measurement
  • Optoelectronic Devices
  • Photodetectors
  • Photodiodes
  • Quantum Efficiency
  • Scattering
  • Semiconductors
  • Spectra
  • Thickness

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition