Investigation of the Transport, Dielecric and Switching Properties of Metal-Oxide (MOX) Nb02 Suppressor Devices.
Abstract
NbO2 threshold switching devices have shown excellent capability as suppressor of high voltage, high current pulses when other more conventional devices cannot be applied. Stable and reproducible switching performance was observed in the Bi-NbO2-Bi device structure. Improvements in the device performance is attributed to the Bi diffusion into NbO2. This was shown by the Auger electron spectroscopy (AES) measurements. The pulsed switched single crystal devices can withstand pulse duration between 0.1-3.0 microsecond, repetition rate of 1000 Hz and current intensities of 26 Amps. peak with applied pulse duration of 20 microsecond single shot. Maximum energy was of the order of 2.52 joules. Polycrystalline devices passed maximum currents of 45 Amps. A final recommended device configuration is Au-Cr-Bi-NbO2-Au with 500 A films of each Au, Cr and Bi. It was found that Cr acted as a barrier and prevented Au diffusion. This was confirmed by AES measurements. A better adhesion and prolonged device life time was achieved. In the final device configuration a layer of silicon dioxide was evaporated over the device to eliminate sparking and contamination effects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 1981
- Accession Number
- ADA103572
Entities
People
- B. Lalevic
Organizations
- Rutgers School of Engineering