An Investigation of Impurity Redistribution Effects and Solubility/Diffusivity of Cr in GaAs.
Abstract
Experiments have begun on the investigation of the thermodynamics and phase equilibrium of the Ga-Cr-As system and the solubility and diffusivity of Cr in GaAs under selected conditions of temperature and source composition. Allied experiments on the influence of defects in GaAs have shown that stable front surface Cr depletion channels can be formed in GaAs for retarding the outdiffusion of Cr. Investigations of the influence of non-stoichiometric regions introduced by implantation (as predicted by the Christel-Gibbons model) on the redistribution of Cr after annealing have shown a definitive correlation between predicted damage zones and experimentally observed gettering regions. The field enhanced diffusion of Cr into contact regions of GaAs-FETs under accelerated thermal-bias stress testing has now been shown to be correlated with the degradation of contacts during stress. Separate experiments on CZ-Si containing oxygen have demonstrated that oxygen is extremely mobile in Si and can be gettered into damage regions at temperatures as low as 350 C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1980
- Accession Number
- ADA103900
Entities
People
- Calvin Leung
- D. Stevenson
- R. A. Armistead
- R. Ormond
- T. J. Magee