The Application of Ion Implantation to Compound Formation.

Abstract

Contents: Solid-Phase Epitaxial Growth (SPEG); Radioactive Si Tracer Technique; Redistribution of Impurities in Silicide Formation; Ion Mixing; Very Thin <Si> Films, and 400 kV Ion Implantation System.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1981
Accession Number
ADA104036

Entities

People

  • J. O. Mccaldin
  • James W. Mayer
  • Marc-a. Nicolet

Organizations

  • California Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Crystals
  • Diffusion Coefficient
  • Electron Spectroscopy
  • Epitaxial Growth
  • Films
  • Heat Treatment
  • Ion Beams
  • Ion Implantation
  • Jet Propulsion
  • Materials
  • Metal Films
  • Single Crystals
  • Solid Phases
  • Thin Films

Readers

  • Aerosol Science/Aerosol Physics
  • Semiconductor Device Technology