Ionization Enhanced Migration of Radiation Produced Defects in Silicon,

Abstract

Evidence for ionization enhanced migration of radiation produced defects in silicon is reviewed. Detailed results from EPR and DLTS studies are presented for the lattice vacancy, interstitial boron, and interstitial aluminum. The implications of these results to the mystery of the low temperature migration of interstitial silicon are discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1979
Accession Number
ADA104481

Entities

People

  • A. P. Chatterjee
  • G. D. Watkins
  • J. R. Troxell
  • R. D. Harris

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Aluminum
  • Annealing
  • Atoms
  • Compound Semiconductors
  • Diffusion
  • Electron Holes
  • Electronics
  • Energy
  • Heat Of Activation
  • Kinetic Energy
  • Low Temperature
  • Materials
  • Radiation
  • Release Mechanisms
  • Security
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology