Negative-U for Point Defects in Silicon,

Abstract

New evidence is presented that the lattice vacancy and interstitial boron in silicon are negative-U systems: (1) the equilibrium charge state for the vacancy in low resistivity p-type material is confirmed to be V++. (2) The metastable donor level for interstitial boron at Ec-0.12 eV is detected in a novel photo-DLTS experiment confirming its negative-U properties. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1980
Accession Number
ADA104482

Entities

People

  • A. P. Chatterjee
  • G. D. Watkins
  • R. D. Harris

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplitude
  • Annealing
  • Charge Carriers
  • Contracts
  • Conversion
  • Crystal Lattices
  • Distortion
  • Electronics
  • Electrons
  • Emission
  • Intensity
  • Low Temperature
  • Materials
  • Optical Materials
  • Point Defects
  • Radiation
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.