Secondary Ion Mass Spectrometric Image Depth Profiling for Three-Dimensional Elemental Analysis.

Abstract

Three-dimensional elemental microcharacterization of the near-surface regions of solid samples is performed by combining the dynamically eroding nature of secondary ion mass spectrometry (SIMS), spatially resolved multi-area, multi-element ion intensity data, and digital image processing. Multiple simultaneous depth profiles and three-dimensional image profiles are used to analyze a metal-oxide semiconductor (MOS) integrated circuit and ion implant samples. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA105092

Entities

People

  • Adam J. Patkin
  • George H. Morrison

Organizations

  • Cornell University Department of Chemistry and Chemical Biology

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Weapons Technologies

DTIC Thesaurus Topics

  • Acquisition
  • Chemistry
  • Computer Programs
  • Digital Image Processing
  • Digital Images
  • Image Processing
  • Integrated Circuits
  • Mass Spectrometry
  • Materials
  • Metal Oxide Semiconductors
  • Military Research
  • New York
  • Sampling
  • Silicon Dioxide
  • Spectrometry
  • Standards
  • Universities

Readers

  • Analytical Chemistry
  • Computer Vision.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene