Analysis of the Temperature Dependence of Resistivity in N-Type Silicon.

Abstract

This work consists of an analytical development of the observed temperature dependence of the resistivity in n-type silicon. This is accomplished by considering the temperature dependence of each physical parameter (such as electron scattering terms) contributing to resistivity in various doping ranges. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 16, 1981
Accession Number
ADA105192

Entities

People

  • Marilyn Glaubensklee

Organizations

  • Braddock Dunn & McDonald

Tags

Communities of Interest

  • Advanced Electronics
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Aerospace Industry
  • Air Force
  • Conduction Bands
  • Current Density
  • Department Of Defense
  • Electron Density
  • Electron Mobility
  • Electron Scattering
  • Electronics
  • Electrons
  • Energy Bands
  • Equations
  • Intrinsic Semiconductors
  • N Type Semiconductors
  • Scattering
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Economics
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics