Study of 1/f Noise in Solids.
Abstract
A Hewlett-Packard digital fast Fourier transform spectral analyser was purchased and adapted for our purpose by writing several computer programs for the output display. Test jigs for devices under test and preamplifiers were built. Further, a real time dual channel correlation spectral analyzer was designed and partially built. Measurements involving temperature fluctuations and correlations in metal films and in integrated circuit transistors are described. The latter have been recently completed. It is conclusively shown that temperature fluctuations are not the cause of 1/f noise in these devices. Under the heading of theoretical work, an extensive analysis is presented of noise in diffusion systems. Several analytical models, not considered before, have been solved and the noise is presented. It is conclusively shown that volume (bulk) diffusion noise, whether based on the physical diffusion source or on Voss and Clarke's P-source, never leads to 1/f-type spectra. However, surface fluctuations as, e.g., caused by stochastic surface generation-recombination processes, can give rise to many decades of 1/f noise. This is worked out in detail for a MOSFET structure. We conclude, therefore, that the large noise observed in MOSFETs can be due to carrier number fluctuations subject to diffusion; at low frequencies the MacWhorter-van der Ziel model may be operative, whereas at higher frequencies our model takes over. Finally, in the theory section we present a novel derivation of quantum 1/f noise, occurring in emission processes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1981
- Accession Number
- ADA105219
Entities
People
- Eugene R. Chenette
- Karel M. Van Vliet
Organizations
- University of Florida