Cathodoluminescence Characterization of Ion Implanted GaAs.
Abstract
Depth-resolved cathodoluminescence was used to study ion implanted GaAs. This was done in a two step process. First a model for the luminescence from ion implanted GaAs was developed. This model includes a detailed Monte Carlo simulation of electrons penetrating into GaAs. The result of this calculation is a prediction of luminescent intensity as a function of electron beam energy. This calculation differs from preceding ones in that the ion implanted profile is specifically included in the analysis. Second, the model was validated by a suitable experiment that confirms the theoretical predictions. The luminescence measurements were made on Mg ions implanted into epitaxial GaAs. Mg was chosen since it has not been previously studied in epitaxial GaAs. The results of this research include the identification of many of the lines in the Mg implanted GaAs spectrum from 1.32 ev to 1.52 ev, a study of the effect of changing the current of the electron beam on the spectra and a comparison of the theoretical and experimental luminescence curves. These results show that changing the current density at the sample surface dramatically changes the spectra and that good agreement exists between the theoretical and experimental luminescence curves. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1981
- Accession Number
- ADA105656
Entities
People
- Milton L. Cone
Organizations
- Wright Laboratory