Analytical Investigation of Neutron Hardening of Integrated Injection Logic.

Abstract

An analytical technique is presented for investigating the neutron induced degradation of integrated injection logic (I2L) inverter cells as a function of basic processing variables. The technique combines a one-dimensional semiconductor device code, the PN code, with the circuit analysis code SPICE. Predictions of neutron induced degradation as a function of npn transistor base doping, epitaxial thickness and resistivity and pnp transistor base width are presented for a second generation I2L technology. A comparison of predicted response to experimental data is given for inverter cells fabricated with different npn base doping and epitaxial thickness. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 11, 1980
Accession Number
ADA106068

Entities

People

  • R. L. Pease

Tags

Communities of Interest

  • Advanced Electronics
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Cells
  • Circuit Analysis
  • Coefficients
  • Experimental Data
  • Geometry
  • Hardening
  • Hardness
  • Npn Transistors
  • Plastic Explosives
  • Pnp Transistors
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Thickness
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics