Impurity and Defect Interactions in GaAs.
Abstract
The construction of an epitaxial reactor to examine the basic aspects of complex formation in GaAs has been completed. This reactor is designed to simultaneously dope the growing layer with a donor impurity and Cr and/or O so that impurity interaction regions are obtained in the same sample. We are currently calibrating this system for several dopants. The redistribution of Cr during the annealing of uniform and ion-implanted bulk samples has been examined. Preliminary results indicate that the Cr build-up at the surface can be modified by applying an electric field to the surface during the annealing process. With the availability of high-purity GaAs from a variety of epitaxial growth techniques, improved donor identifications have been made by far infrared photoconductivity measurements. Samples grown by AsCl3-H2 VPE, AsCl3-N2 VPE, AsH3 VPE, LPE, MBE, and MOCVD have been examined and the common residual donors have been identified.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1981
- Accession Number
- ADA106106
Entities
People
- C. M. Wolfe
- Camellia M. L. Yee
- G. E. Stillman
- P. A. Fedders
- R. T. Green
Organizations
- University of Washington