The On-State of Single-Crystal and Polycrystalline NbO2
Abstract
Single-crystal and polycrystalline NbO2 switching devices were studied by double pulse and pulse interruption techniques. Results for single-crystal devices indicated a recovery time of 0.8-1.2 microseconds that is independent of the polarity relationship of the first and second switching pulses. Voltage interruptions, obtained by pulses of variable duration in opposition to the on-voltage, provided excursions into the on-state and revealed plateau regions in device voltage versus time. Hence the opposition or "diagnostic" pulse provides a region of rapidly decreasing on-state voltage followed by a region of zero on-voltage, from which current-voltage (I-V) data can be measured. An I-V curve of the on-state, thus obtained, showed a transitional region from an Ohmic state to a lower conductance subregime (of on-state). Below the holding voltage the time required to develop this lower-conductance subregime is about 50 ns for a single-crystal device, agreeing favorably with results from cw studies. The related time interval for polycrystalline devices is 250-350 ns. The interval between the holding voltage and the beginning of the transitional regime (10-20 ns) is interpreted to be the trapped carrier lifetime or emission time.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1981
- Accession Number
- ADA106136
Entities
People
- B. Lelevic
- G. K. Gaule
- Gary C. Vezzoli
- L. W. Doremus
- Steve Levy
Organizations
- Rutgers School of Engineering