A Photoluminescence Study of Defects in GaAs Caused by Film Deposition and Annealing.

Abstract

Photoluminescence (PL) is used to investigate changes induced in the surface layer of a Gallium Arsenide (GaAs) substrate by sputter-deposition and subsequent annealing. Since PL is both sensitive and non-destructive, it provides a powerful research tool for investigating optically active defects and impurities at near band gap energies. Emission spectra of GaAs substrates encapsulated with thin films of silicon nitride (Si3N4) by the technique of neutralized ion beam sputter-deposition reveal no optically active defects at near band gap energies. Annealing substrates encapsulated with Si3N4 adds an emission to the PL spectrum. This emission is attributed to a Gallium vacancy (Vga)-Silicon acceptor complex. This same complex may also be generated during annealing of bare GaAs substrates doped with Silicon (Si). This complex acts to compensate a n-type surface layer on the substrate and, in general, degrades its qualities. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1978
Accession Number
ADA106283

Entities

People

  • Joseph A. Bowden

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Ceramic Materials
  • Compound Semiconductors
  • Conduction Bands
  • Crystal Lattices
  • Detectors
  • Dielectric Films
  • Electrons
  • Emission Spectra
  • Energy Bands
  • Energy Gaps
  • Field Effect Transistors
  • Gallium Arsenides
  • Heat Treatment
  • High Temperature
  • Semiconductors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene