Heterojunctions in Semiconductors.
Abstract
Liquid phase epitaxial growth of Ge onto single crystal GaAs substrates has resulted in the growth of p+Ga-n GaAs semiconductor heterojunctions. The structures have been examined by Auger spectroscopy and their current voltage characteristics are dominated by intra-band tunneling in the low voltage region. A qualitative model for the tunneling process is introduced. Heterojunctions of n ZnO with both p and n Si have been prepared by reactive r.f. sputtering. Both n-n and p-n diodes rectify and the low forward bias characteristics show large ideality factors. The results are interpreted by a model in which macroscopic mobility, controlled by intergranular barriers, is coupled with an interface state dominated band profile. Information is given concerning technical papers and conference presentations which have been partly supported by this contract. Reprints are included of two papers which deal with the evaluation of In(1-x)Ga(x)As(y)P(1-y)/InP heterostructures. Several electron and hole traps have been identified and the growth, transport properties, defects and heterostructure device performance has been evaluated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1981
- Accession Number
- ADA106546
Entities
People
- S. J. T. Owen
Organizations
- Oregon State University