Characterization of Power MESFETs at 21 GHz.

Abstract

This report describes the development of GaAs MESFET power amplifiers at 21 GHz. Techniques for making large-signal loadpull and 'S' parameter measurements at these frequencies, and the measured device characteristics are presented. A unique method of obtaining accurate gain and power measurements is discussed. Design methods and data are presented on 21 GHz amplifiers with more CW power and higher efficiency than previously achieved. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 15, 1981
Accession Number
ADA106673

Entities

People

  • Mark L. Stevens

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Amplifiers
  • Calibration
  • Efficiency
  • Field Effect Transistors
  • Flip Chips
  • Frequency
  • Measurement
  • Networks
  • Power Measurement
  • Power Meters
  • Semiconductors
  • Standards
  • Standing Waves
  • Test Fixtures
  • Transistors
  • Transmission Lines

Readers

  • Integrated Circuit Design and Technology.
  • Microwave Engineering.