Deep Impurity States in Gallium Arsenide.
Abstract
We have studied opto-electronic properties of semi-insulating gallium arsenide, including oxygen doped, chromium doped, undoped, and ion-bombarded materials. We have found that the luminescence from chromium-doped samples has much find structure which had not been previously seen; this led to a better understanding of chromium complexing and of local lattice vibration and Fano anti-resonance at a substitutional Cr site. We have identified two other luminescence bands as related to oxygen and native defects respectively. Photoconductivity and photo-Hall studies have elucidated some of the optical transitions and showed evidence that much of the spectral shape is due to quenching effects. DLTS and thermally-stimulated current measurements were used to study oxygen doped and 'undoped' semi-insulating GaAs, revealing a variety of deep and medium-deep levels. A combination of theory and experiment has proved valuable to the understanding of the photoionization cross sections, Fano anti-resonance, and local mode coupling of the deep impurity states. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1981
- Accession Number
- ADA106695
Entities
People
- Claude M. Penchina
Organizations
- University of Massachusetts Amherst