Radiation Damage Processes in Silicon,

Abstract

The basic objective is to understand the electronic properties of simple point lattice defects in the silicon lattice, the mechanisms by which they are formed, and the processes by which they can migrate through the lattice and react with other defects to form complexes.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1981
Accession Number
ADA107170

Entities

People

  • George D. Watkins

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Kinetics
  • Crystal Lattices
  • Electron Irradiation
  • Electron Paramagnetic Resonance
  • Electrons
  • Elements
  • High Energy
  • Impurities
  • Low Temperature
  • Paramagnetic Resonance
  • Point Defects
  • Radiation
  • Radiation Effects
  • Resonance
  • Semiconductors
  • Transition Metals

Readers

  • Organic Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene