Impact Ionization and Hot Carrier Transport in Semiconductors.

Abstract

The major emphasis has been on an experimental study of impact ionization in Pt/nGaAs and Pt/plnP <100> Schottky barrier and developing the theoretical background necessary to interpret the measurements. The intention here was to establish the Schottky barrier as a configuration which would permit more reliable measurements of impact ionization coefficients than p-n junction configurations. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA107386

Entities

People

  • C. R. Crowell

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Crystal Lattice Vibrations
  • Diodes
  • Electric Fields
  • Electrical Engineering
  • Electrons
  • Energy Bands
  • Ionization
  • Materials
  • Materials Science
  • Mean Free Path
  • Pair Production
  • Photoelectrons
  • Probability
  • Scattering
  • Schottky Diodes
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Plasma Physics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics