Preparation of Large-Diameter GaAs Crystals.
Abstract
Significant progress has been made toward developing large-diameter, semi-insulating GaAs crystals of improved quality by LEC growth for direct ion implantation. The intent has been to (1) develop a reproducible twin-free growth technique for large-diameter 50-mm and 75-mm GaAs crystals; (2) achieve stable, semi-insulating substrate properties without resorting to intentional doping with chromium (or at least to reduce the Cr content significantly) to avoid the serious redistribution problems associated with this impurity; (3) obtain uniform, predictable doping characteristics by direct 29Si implantation; and (4) demonstrate that uniform, round cross-section slices suitable for low-cost IC processing can be fabricated from LEC crystals.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 18, 1981
- Accession Number
- ADA107395
Entities
People
- D. L. Barrett
- G. W. Eldridge
- H. M. Hobgood
- R. N. Thomas
- T. T. Braggins