Determination of Yttrium in High Density Silicon Nitride by Emission and X-Ray Fluorescence Spectroscopy.
Abstract
Two spectrographic methods were developed for the determination of yttrium in high density yttrium-doped silicon nitride. The first method employs emission spectrographic techniques which compares a solution of the dissolved sample with that of aqueous synthetic standards. The second method uses energy dispersive X-ray fluorescence techniques to compare fusion buttons made from the samples with those fabricated from pure yttria and undensified silicon nitride. Synthetic standards were required in both methods because there were no available yttrium-densified silicon nitride standards. Seven samples were analyzed whose yttrium content ranged from two to sixteen weight percent. Data on results are furnished.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1981
- Accession Number
- ADA107596
Entities
People
- Bernard H. Strauss
Organizations
- United States Army Research Laboratory