LSI/VLSI Ion Implanted GaAs IC Processing

Abstract

This report covers the third quarter of a program on LSI/VLSI ion implanted planar GaAs integrated circuit processing. The goal of this program is to realize the full potential of GaAs digital integrated circuits employing depletion mode MESFETs by developing the necessary processing methods and material capabilities to extend device complexity to VLSI. In the third quarter the digitization of mask set AR6 was completed. Masks are expected from the vendor shortly. Evaluation of refinements in the fabrication process aimed at improving reliability has continued, while evaluation of circuit reliability has been started.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1981
Accession Number
ADA107623

Entities

People

  • A. Firstenberg
  • B. M. Welch
  • C. G. Kirkpatrick
  • C. P. Lee
  • G. Kaelin
  • P.M. Asbeck
  • R. Zucca
  • Y. D. Shen

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Air Force
  • Contractors
  • Contracts
  • Electrons
  • Experimental Data
  • Field Effect Transistors
  • Free Electrons
  • Generators
  • Heat Treatment
  • Ion Implantation
  • Logic
  • Logic Gates
  • Power Supplies
  • Test And Evaluation
  • Two Dimensional
  • Visual Inspection

Readers

  • Clinical Trial Research.
  • Integrated Circuit Design and Technology.