Preparation of InP by Solution and Melt Growth Techniques.

Abstract

A modified InP synthesis system has been designed, constructed and put into operation. Basic studies on InP growth have been initiated and deficiencies inherent to the growth system identified. The nature of the effects of liquid encapsulation has been studied using Ga-doped Ge as a model system. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1981
Accession Number
ADA107646

Entities

People

  • August F. Witt

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Encapsulation
  • Engineering
  • Heat Energy
  • Heat Pipes
  • High Pressure
  • High Resolution
  • High Temperature
  • Information Transfer
  • Materials
  • Materials Science
  • Measurement
  • Single Crystals

Readers

  • Instructional Design and Training Evaluation.
  • Semiconductor Device Technology