High-Pressure Gradient-Freeze Growth of Single Crystals of Indium Phosphide.
Abstract
A gradient-freeze growth system for the growth of large single crystals of InP is described. The system synthesizes and grows InP without reloading. Large poly ingots weighing up to 2,000 gms can be compounded by this method in a few hours. Ingots grown in the system have an impurity level of about 2 x 10 to the 16th power atoms/cu cm. This technique promises to be a method by which large single crystals can be grown at a reasonable cost. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1981
- Accession Number
- ADA107731
Entities
People
- Worth P. Allred