Study of Defects Produced by the Growth, Post Treatment and Fabrication of Quartz.
Abstract
We are using a number of experimental techniques to investigate the various as-grown and radiation-induced defects in commercially available high-quality synthetic quartz. Interstitial ions such as H(+), Li(+), and Na(+) as well as radiation-induced holes trapped at oxygen ions act as charge compensator's located adjacent to the aluminum and this gives rise to Al-OH(-), Al-Li(+), Al-Na(+), and Al-hole centers. Absolute concentrations of these compensated aluminum centers have been determined as a function of irradiation and annealing temperature for a variety of samples, both swept and unswept. The various treatments simply exchange one type of compensator for another at the aluminum sites and, within experimental error, the sum of the aluminum centers remains constant for a given sample. This direct accountability of all the aluminum ions in hydrogen-swept samples strongly suggests that the 1/3306 cm and 1/3367 cm infrared bands are associated with the Al-OH(-) center. Also, the ESR and IR results show that the aluminum content of randomly selected bars of high-quality quartz can vary by an order of magnitude. Acoustic loss measurements on a 5MHz 5th overtone resonator blank show no loss peaks that can be attributed to the Al-Li(+) center. A series of oxygen-vacancy-associated centers have been discovered by ESR. An investigation of the thermally stimulated luminescence, TSL, from quartz irradiated at 95K has been made below room temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1981
- Accession Number
- ADA107771
Entities
People
- Joel J. Martin
- Larry E. Halliburton
- William A. Sibley
Organizations
- Oklahoma State University–Stillwater