Research on Long Wavelength Bias-Assisted Photoemitters.

Abstract

The infrared threshold for photoemission has been extended to 2.1 microns by use of a bias-assisted lattice-mismatched In.77Ga.23As/InAsP/InP photocathode. Quantum yield at 1.9 microns was .002 electrons/incident photon, for 2.4V bias and a temperature of approximately 125K. This photocathode structure was grown by vapor phase epitaxy. Molecular beam epitaxy (MBE) has also been used to grow In.77Ga.23As/buffer/InP structures. The effect of different buffer layer schemes, including a superlattice structure, on MBE-grown In.77Ga.23As mobility and photoluminescence was investigated. Infrared imaging was demonstrated out to 1.65 microns using an In.53Ga.47As/InP bias-assisted photocathode operating in the transmission mode. Good reduction and sensitivity were obtained, indicating the potential usefulness of bias-assisted photocathodes for infrared imaging. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA107815

Entities

People

  • P. E. Gregory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Conduction Bands
  • Electron Energy
  • Emitters
  • Energy
  • Energy Bands
  • Epitaxial Growth
  • Long Wavelengths
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optical Properties
  • Photons
  • Quantum Yields
  • Semiconductors
  • Solid State Physics
  • Vapor Phases
  • Work Functions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing