Research on Development of Low-Resistance p-n Junctions in ZnSe.

Abstract

The doping problems associated with making a low-resistance p-n junction in ZnSe were investigated using modern epitaxial and implantation techniques. Substantial evidence for the role of nitrogen as a 'new' shallow acceptor with an ionization energy of 85 + or - 5 meV was found, and a number of other acceptors were characterized. The behavior of background donors was studied; silicon and aluminum were found to be especially harmful contaminants. A ZnSe layer with a p-type conductivity of 1.5 x 10,000 ohm-cm was made. This is the lowest p-type resistivity in ZnSe for the case where the p-type character was definitely established. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1981
Accession Number
ADA108008

Entities

People

  • B. Fitzpatrick

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Ceramic Materials
  • Compound Semiconductors
  • Conductivity
  • Elements
  • Epitaxial Growth
  • High Temperature
  • Implantation
  • Ion Implantation
  • Ionization
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Mass Spectrometry
  • Mass Spectroscopy
  • P-N Junctions
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design